Abstract: Perovskite lanthanum titanium thin films were deposited on Nb-doped (001) SrTiO3 substrates by reactive RF magnetron sputtering using a La2Ti2O7 target. Oxynitride LaTiO2N films were obtained using N2 rich plasma; they display a variation of their dielectric constant as a function of DC bias in the low frequency range but not in microwaves. The dielectric constant (epsilon) values are high with, for example, epsilon = 325 at 100 kHz. The oxide films, obtained in O2 rich plasma, are composed of an unusual La2Ti2O7 phase with an orthorhombic cell...
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