Abstract: International audience; In this work, we propose a reliability analysis targeting the evaluation of the suitability of a Phase-Change Memory (PCM) device for Storage Class Memory (SCM) applications. Thanks to the analysis of programming and endurance characteristics in single devices and 4kb arrays we compare two different GeTe and GeSbTe ($\alpha$GST) based PCM. The evolution of the phase-change material along cycling is explained by the analysis of subthreshold characteristics and analytical equations based on experimental data for the descri...
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Topics: 
Electronic engineering
Parallel computing
Optoelectronics