Abstract: The donor binding energies associated with the ground state and a few excited states, are computed as a function of the dot size and the impurity position within two and three dimensional GaAs quantum dots. The calculation has been done using the Potential Morphing Method a recently developed numerical method for the solution of time independent Schrodinger equation. The agreement with both perturbation and variational methods is very good, as regards the dependence of the binding energies on the dot size as well as on the location of the impur...
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Topics: 
Quantum mechanics
Atomic physics