Abstract: Single crystals of Ga-containing MAX-phases Ti{sub 2}GaC, Ti{sub 4}GaC{sub 3}, and Cr{sub 2}GaC were grown from a metallic melt generated by an excess of Ga. This technique allows the crystal growth at different temperatures to control the product distribution. Compounds developed were Ti{sub 2}GaC and TiC at 1500 deg. C, and Ti{sub 2}GaC and Ti{sub 4}GaC{sub 3} at 1300 deg. C. Crystal structures were refined from single crystal data. Ti{sub 2}GaC and Cr{sub 2}GaC were previously known, and belong to the Cr{sub 2}AlC type as well as the solid s...
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Topics: 
Physical chemistry