@article{Nguyen_2013,<br/><span class="tab"></span> title={Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes},<br/><span class="tab"></span> volume={740–742},<br/><span class="tab"></span> ISSN={1662-9752},<br/><span class="tab"></span> url={http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.609},<br/><span class="tab"></span> DOI={10.4028/www.scientific.net/msf.740-742.609},<br/><span class="tab"></span> journal={Materials Science Forum},<br/><span class="tab"></span> publisher={Trans Tech Publications,<br/><span class="tab"></span> Ltd.},<br/><span class="tab"></span> author={Nguyen,<br/><span class="tab"></span> Duy Minh and Huang,<br/><span class="tab"></span> Runhua and Phung,<br/><span class="tab"></span> Luong Viet and Planson,<br/><span class="tab"></span> Dominique and Berthou,<br/><span class="tab"></span> Maxime and Godignon,<br/><span class="tab"></span> Philippe and Vergne,<br/><span class="tab"></span> Bertrand and Brosselard,<br/><span class="tab"></span> Pierre},<br/><span class="tab"></span> year={2013},<br/><span class="tab"></span> month=jan,<br/><span class="tab"></span> pages={609–612} }