2012 •
Charge photo-carrier transport from silicon nanocrystals embedded in SiO 2 -based multilayer structures
Authors:
B. Dridi Rezgui, Fabrice Gourbilleau, D. Maestre, Olivier Palais, A. Sibai, Mustapha Lemiti, Georges Bremond
Abstract:
International audience; Experimental investigation of photoconductivity in Si-rich silicon oxide (SRSO)/SiO2 multilayer (ML) structures prepared by magnetron reactive sputtering is reported. Photocurrent (PC) measurements show that the PC threshold increases with decreasing the thickness of SRSO layer. Photo-conduction processes in our samples are shown to be dominated by carrier transport through quantum-confined silicon nanocrystals embedded in the SiO2 host. In addition, the observed bias-dependence of photocurrent intensity is consistent wi (...)
International audience; Experimental investigation of photoconductivity in Si-rich silicon oxide (SRSO)/SiO2 multilayer (ML) structures prepared by magnetron reactive sputtering is reported. Photocurrent (PC) measurements show that the PC threshold increases with decreasing the thickness of SRSO layer. Photo-conduction processes in our samples are shown to be dominated by carrier transport through quantum-confined silicon nanocrystals embedded in the SiO2 host. In addition, the observed bias-dependence of photocurrent intensity is consistent with a model in which carrier transport occurs by both tunneling and hopping through defect states in the silicon oxide matrix. A photocurrent density Jph of 1–2 mA cm−2 is extracted from our results. Although this photocurrent density along the ML absorber film is relatively low, the results presented in this work are believed to be a valuable contribution toward the implementation of all-Si tandem solar cells. (Read More)
B. Dridi Rezgui, F. Gourbilleau, D. Maestre, O. Palais, A. Sibai, M. Lemiti, G. Brémond
Journal of Applied Physics ·
2012
Optoelectronics |
Nanotechnology |
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