Authors: Mazza, S.M., Padilla, R., Labitan, C., Galloway, Z., Gee, McKinney-Martinez, F., Sadrozinski, H. F.-W., Seiden, A., Schumm, B., Wilder, M., Zhao, Y., Ren, H., Jin, Lockerby, Cindro, V., Kramberger, G., Mandiz, I., Mikuz, Zavrtanik, Arcidiacono, Cartiglia, N., Ferrero, Mandurrino, Sola, Staiano
Venue: Journal of Instrumentation
Type: Publication
Abstract: The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Carbon infusion to the gain layer of the sensors was tested by FBK in the UFSD3 production. HPK instead produced LGADs with a very thin, highly doped and...
(read more)
Loading (it may take a couple of seconds)...
Loading (it may take a couple of seconds)...