Abstract: The hydrogen concentrations of PCVD silicon nitride films were measured by Elastic Recoil Detection (ERD) analysis using 2.5 MeV He+ ions. For annealed films, H concentrations measured by ERD analysis are smaller than those measured by an infrared absorption analysis. These results indicate that absorption cross sections of Si-hydrogen and N-hydrogen bonds are changed by annealing.
We have placed cookies on your device to help make this website and the services we offer better. By using this site, you agree to the use of cookies. Learn more