Abstract: Modeling of photovoltaic properties of multi-junction solar cells integrated on a Si substrate with an array of GaN nanowires as a top emitter has been carried out. Very good antireflection properties of the structure are demonstrated theoretically: the calculated reflectance is lower than 3% for both GaN nanowires/Si and GaN nanowires on GaPN/Si cells. According to our simulations, basic GaN nanowires on Si cell with optimised parameters (doping and NWs morphology) provides energy conversion efficiency of 20%. The approach demonstrates high po...
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Topics: 
Optoelectronics
Nanotechnology