Abstract: The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS) and high-energy resolution REELS (HR-REELS). HR-REELS with a primary electron energy of 0.3 keV revealed that the surface F center (FS) energy was located at approximately 4.2 eV above the valence band maximum (VBM) and the surface band gap width (E-g(S)) was approximately 6.3 eV. The bulk F center (F-B) energy was located approximately 4.9 eV above the VBM and the bulk band gap width was about 7.8 eV, when measured b...
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Topics: 
Atomic physics