Abstract: Abstract Changes in the surface activity of n-Si after being exposed to a solution containing hydroxyl ( OH) radicals were approached. These changes caused by the interaction between silicon and the OH radicals were characterized by analyzing the nucleation and growth mechanisms of copper electrodeposited on silicon. Thus, both copper depositions on n-Si without prior exposure to hydroxyl radicals and with it at different exposure periods were analyzed. By means of j/t transients analysis a change in the nucleation and growth mechanisms of copp...
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Topics: 
Photochemistry
Inorganic chemistry